PART |
Description |
Maker |
HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb 128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM 128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
HY5DU283222BF-33 HY5DU283222BF-36 HY5DU283222BFP-2 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU2816 |
128M(8Mx16) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DU283222AQ HY5DU283222AQ-33 HY5DU283222AQ-36 HY |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU121622BT-5 HY5DU121622BT-6 HY5DU121622BTP-5 H |
512Mb(32Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
HY5DS573222F-36 HY5DS573222F-28 HY5DS573222FP-4 HY |
256M(8Mx32) GDDR SDRAM 8M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|